PART |
Description |
Maker |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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MJW16212 ON2060 |
Power 10A 650V NPN POWER TRANSISTOR From old datasheet system High and Very High Resolution Monitors
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ON Semiconductor http://
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2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT
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PANASONIC CORP PANASONIC[Panasonic Semiconductor]
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BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR HIGH POWER NPN TRANSISTOR From old datasheet system HIGH VOLTAGE NPN POWER TRANSISTOR 8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
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Cornell Dubilier Electronics, Inc. http:// Cornell Dubilier Electronic... Cornell Dubilier Electr...
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AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
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International Rectifier
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2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS HIGH VOLTAGE HIGH SPEED SWITCHING BIPOLAR POWER GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
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友顺科技股份有限公司 UTC[Unisonic Technologies]
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IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
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Hitachi Semiconductor
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AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. Power Amplifiers KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module
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Anadigics Inc ANADIGICS, Inc
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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